Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Classification of electronic componentsDescription: Transistor, IGBT array&module, N-channel, 400 A, 1.75 V, 2.4 kW, 1.2 kV, Module82531+$656.220510+$633.195250+$630.3170100+$627.4389150+$622.8338250+$618.8044500+$614.77501000+$610.1699 -
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Category: Classification of electronic componentsDescription: Diode Switching 1.7kV 600A 2Pin 62MM-2 Tray36011+$1858.026510+$1841.135425+$1832.689850+$1824.2442100+$1815.7986150+$1807.3531250+$1798.9075500+$1790.4619 -
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Category: IGBTtransistorDescription: 62Millimeter C-Serien MODUL MIT Trench/Fieldstop IGBT4 IND emitter control diode 4 62 mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode10661+$793.190310+$765.359150+$761.8802100+$758.4013150+$752.8350250+$747.9646500+$743.09411000+$737.5279 -
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Category: IGBTtransistorDescription: 62Millimeter C-Serien MODUL MIT Trench/Fieldstop IGBT4 IND emitter control diode 4 62 mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode31651+$623.598210+$601.717650+$598.9825100+$596.2474150+$591.8713250+$588.0422500+$584.21311000+$579.8370 -
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Category: IGBTtransistorDescription: 62Millimeter C-Serien MODUL MIT Trench/Fieldstop IGBT4 IND emitter control diode 4 62 mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode97871+$620.856510+$599.072150+$596.3490100+$593.6260150+$589.2691250+$585.4568500+$581.64451000+$577.2877 -
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Category: Classification of electronic componentsDescription: Transistor, IGBT array&module, N-channel, 800 A, 1.7 V, 3.55 kW, 1.2 kV, Module80741+$2079.014310+$2060.114225+$2050.664150+$2041.2140100+$2031.7640150+$2022.3139250+$2012.8638500+$2003.4138 -
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Category: Classification of electronic componentsDescription: Our well-known 62mm 1700V single switch IGBT modules with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode are ...31771+$2263.094910+$2242.521325+$2232.234550+$2221.9477100+$2211.6609150+$2201.3741250+$2191.0873500+$2180.8005 -
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Category: IGBTtransistorDescription: IGBT 模块，Infineon **Infineon** 系列 IGBT 模块提供低切换损耗，用于高达 60 khz 频率的切换。 IGBT 跨一系列电源模块，如 ECONOPACK 封装，1200V 时带集电极开路发射器电压；PrimePACK IGBT 半桥斩波器模块，其 NTC 高达 1600/1700V。 PrimePACK IGBT 可在工业、商业、建筑和农业车辆中找到。 N 通道 TRENCHSTOP TM 和 Fieldstop IGBT 模块适用于硬切换和软切换应用，例如反相器、UPS 和工业驱动器。 封装类型包括：62mm 模块、EasyPACK、EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 ### IGBT 分立件和模块，Infineon 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。1894 -
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Category: IGBTtransistorDescription: 62毫米C系列模块，具有快速IGBT2高频开关 62mm C-Series module with the fast IGBT2 for high-frequency switching1352 -
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Category: Classification of electronic componentsDescription: Our well-known 62mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching and pre-applied Thermal Interface Material are the right choice for your design.6421 -
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Category: IGBTtransistorDescription: Infineon FZ300R12KE3GHOSA1 N通道 IGBT 模块, 480 A, Vce=1200 V, 5引脚 62MM 模块封装8524 -
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Category: IGBTtransistorDescription: IGBT 模块，Infineon **Infineon 封装类型包括：62mm 模块、EasyPACK、EconoPACKTM IGBT 分立件和模块，Infineon 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。20011+$672.429010+$648.835050+$645.8858100+$642.9365150+$638.2177250+$634.0888500+$629.95981000+$625.2410 -
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Category: IGBTtransistorDescription: 62mm C-Serien MODUL MIT Trench/Fieldstop IGBT4 IND emitter control diode 4 62 mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode78571+$1042.849210+$1006.258050+$1001.6841100+$997.1102150+$989.7920250+$983.3885500+$976.98501000+$969.6668
